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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

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Blázquez, O.; Frieiro, J.; López-Vidrier, J.; Guillaume, C.; Portier, X.; Labbé, C.; Sanchis Kilders, P.... (2018). Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices. Applied Physics Letters. 113(18):1-6. https://doi.org/10.1063/1.5046911

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Título: Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices
Autor: Blázquez, O. Frieiro, J.L. López-Vidrier, J. Guillaume, C. Portier, X. Labbé, C. Sanchis Kilders, Pablo Hernández, S. Garrido, B.
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
[EN] The resistive switching properties of ITO/ZnO/p-Si devices have been studied, which present well-defined resistance states with more than five orders of magnitude difference in current. Both the high resistance state ...[+]
Palabras clave: ZnO Thin-films , Solid-Electrolyte , Memory , Nanofilament , Memristor , Systems , Oxide
Derechos de uso: Reserva de todos los derechos
Fuente:
Applied Physics Letters. (issn: 0003-6951 )
DOI: 10.1063/1.5046911
Editorial:
American Institute of Physics
Versión del editor: https://doi.org/10.1063/1.5046911
Código del Proyecto:
info:eu-repo/grantAgreement/MINECO//TEC2012-38540-C02-02/ES/DISPOSITIVOS DE CONMUTACION Y MODULACION ELECTRO-OPTICA CON FOTONICA DE SILICIO BASADA EN TECNOLOGIA CMOS PARA ENRUTADO INTRA-CHIP E INTERCONEXIONES OPTICAS/
info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/
Agradecimientos:
This work was financially supported by the Spanish Ministry of Economy and Competitiveness (Project Nos. TEC2012-38540-C02-01 and TEC2016-76849-C2-1-R). O.B. also acknowledges the subprogram "Ayudas para Contratos Predoctorales ...[+]
Tipo: Artículo

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