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Esquema tolerante a fallas de transistores del lado de carga aplicado a convertidores CC-CC con puentes duales activos trifásicos

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Esquema tolerante a fallas de transistores del lado de carga aplicado a convertidores CC-CC con puentes duales activos trifásicos

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Ochoa Sosa, JE.; Núñez, R.; Oggier, GE.; Oggier, GG.; García, G. (2022). Esquema tolerante a fallas de transistores del lado de carga aplicado a convertidores CC-CC con puentes duales activos trifásicos. Revista Iberoamericana de Automática e Informática industrial. 19(2):186-198. https://doi.org/10.4995/riai.2022.15408

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/182824

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Title: Esquema tolerante a fallas de transistores del lado de carga aplicado a convertidores CC-CC con puentes duales activos trifásicos
Secondary Title: Fault-Tolerant Scheme of Load-Side Transistors Applied to Three-Phase Dual Active Bridge DC-DC Converters
Author: Ochoa Sosa, Jonathan Emmanuel Núñez, Rubén Oggier, Germán Elías Oggier, Germán Gustavo García, Guillermo
Issued date:
Abstract:
[EN] This work proposes a fault-tolerant new mode operation applied to three-phase dual active bridge dc-dc converters (CPDA3) when a transistor open-circuit fault occurs on the load-side bridge. The proposal is to modify ...[+]


[ES] Este trabajo propone un nuevo funcionamiento en modo tolerante a fallas aplicado a convertidores CC-CC con Puentes Duales Activos Trifasicos (CPDA3) cuando ocurre una falla de circuito abierto de transistor en el ...[+]
Subjects: Three-Phase Dual Active Bridges Converter , Power electronics systems , Modeling and simulation , Detection and diagnosis , Convertidor CC-CC bidireccional , Sistemas electrónicos de potencia , Modelado y simulación , Detección y diagnóstico
Copyrigths: Reconocimiento - No comercial - Compartir igual (by-nc-sa)
Source:
Revista Iberoamericana de Automática e Informática industrial. (issn: 1697-7912 ) (eissn: 1697-7920 )
DOI: 10.4995/riai.2022.15408
Publisher:
Universitat Politècnica de València
Publisher version: https://doi.org/10.4995/riai.2022.15408
Thanks:
El presente trabajo fue soportado por la Secretaría de Ciencia y Técnica de la Universidad Nacional de Río Cuarto (SeCyT, UNRC), el FONCyT de la Agencia Nacional de Promoción Científica y Tecnológica, la Red MEIHAPER CYTED ...[+]
Type: Artículo

References

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