Mostrar el registro sencillo del ítem
dc.contributor.author | Serrano, Jorge | es_ES |
dc.contributor.author | Bosak, A. | es_ES |
dc.contributor.author | Krisch, M. | es_ES |
dc.contributor.author | Manjón Herrera, Francisco Javier | es_ES |
dc.contributor.author | Romero, Aldo Humberto | es_ES |
dc.contributor.author | Garro, N. | es_ES |
dc.contributor.author | Wang, X. | es_ES |
dc.contributor.author | Yoshikawa, A. | es_ES |
dc.contributor.author | Kuball, M. | es_ES |
dc.date.accessioned | 2015-02-25T10:24:46Z | |
dc.date.available | 2015-02-25T10:24:46Z | |
dc.date.issued | 2011-05-19 | |
dc.identifier.issn | 0031-9007 | |
dc.identifier.uri | http://hdl.handle.net/10251/47458 | |
dc.description.abstract | Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering combined with ab initio calculations to determine the complete elastic stiffness tensor, the acoustic and low-energy optic phonon dispersion relations of thin wurtzite indium nitride films. Indium nitride is an especially relevant example, due to the technological interest for optoelectronic and solar cell applications in combination with other group III nitrides. | es_ES |
dc.description.sponsorship | J. S. acknowledges financial support from the Spanish Ministry of Science and Innovation by CICYT Grants No. MAT2010-2-129-C02-01 and No. ENE2008-04373, and by Generalitat de Catalunya Grant No. 2009SGR1251. F. J. M. is thankful for the financial support from CICYT projects No. CSD2007-00045 and No. MAT2010-21270-C04-04, and the "Programa de Incentivo a la Investigacion" of the Universidad Politecnica de Valencia through project No. UPV2010-0096. A. H. R. has been supported by CONACyT Mexico under projects No. TAMU-Conacyt and No. J-83247-F. We acknowledge the beam time granted by ESRF. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | American Physical Society | es_ES |
dc.relation.ispartof | Physical Review Letters | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Fundamental-band gap | es_ES |
dc.subject | Hexagonal InN | es_ES |
dc.subject | Wurtzite aln | es_ES |
dc.subject | Pseudopotentials | es_ES |
dc.subject.classification | FISICA APLICADA | es_ES |
dc.title | InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1103/PhysRevLett.106.205501 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//ENE2008-04373/ES/MATERIALES NANOESTRUCUTRADOS PARA CELULAS SOLARES ORGANICAS Y TIPO GRATZEL/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/Generalitat de Catalunya//2009 SGR 1251/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ / | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/UPV//UPV2010-0096/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/CONACYT//J-83247-F/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada | es_ES |
dc.description.bibliographicCitation | Serrano, J.; Bosak, A.; Krisch, M.; Manjón Herrera, FJ.; Romero, AH.; Garro, N.; Wang, X.... (2011). InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering. Physical Review Letters. 106(20):2055011-2055014. https://doi.org/10.1103/PhysRevLett.106.205501 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.106.205501 | es_ES |
dc.description.upvformatpinicio | 2055011 | es_ES |
dc.description.upvformatpfin | 2055014 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 106 | es_ES |
dc.description.issue | 20 | es_ES |
dc.relation.senia | 206494 | |
dc.identifier.eissn | 1079-7114 | |
dc.contributor.funder | Ministerio de Educación y Ciencia | es_ES |
dc.contributor.funder | Ministerio de Ciencia e Innovación | es_ES |
dc.contributor.funder | Ministerio de Ciencia e Innovación | es_ES |
dc.contributor.funder | Generalitat de Catalunya | es_ES |
dc.contributor.funder | Universitat Politècnica de València | es_ES |
dc.contributor.funder | Consejo Nacional de Ciencia y Tecnología, México | es_ES |
dc.description.references | Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., … Nanishi, Y. (2002). Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80(21), 3967-3969. doi:10.1063/1.1482786 | es_ES |
dc.description.references | Davydov, V. Y., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., … Graul, J. (2002). Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. physica status solidi (b), 229(3), r1-r3. doi:10.1002/1521-3951(200202)229:3<r1::aid-pssb99991>3.0.co;2-o | es_ES |
dc.description.references | Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., … Schaff, W. J. (2006). Evidence forp-Type Doping of InN. Physical Review Letters, 96(12). doi:10.1103/physrevlett.96.125505 | es_ES |
dc.description.references | Song, J.-H., Akiyama, T., & Freeman, A. J. (2008). Stabilization of Bulkp-Type and Surfacen-Type Carriers in Mg-Doped InN{0001}Films. Physical Review Letters, 101(18). doi:10.1103/physrevlett.101.186801 | es_ES |
dc.description.references | Qian, Z. G., Shen, W. Z., Ogawa, H., & Guo, Q. X. (2004). Experimental studies of lattice dynamical properties in indium nitride. Journal of Physics: Condensed Matter, 16(12), R381-R414. doi:10.1088/0953-8984/16/12/r01 | es_ES |
dc.description.references | Davydov, V. Y., Emtsev, V. V., Goncharuk, I. N., Smirnov, A. N., Petrikov, V. D., Mamutin, V. V., … Inushima, T. (1999). Experimental and theoretical studies of phonons in hexagonal InN. Applied Physics Letters, 75(21), 3297-3299. doi:10.1063/1.125330 | es_ES |
dc.description.references | Majumdar, A. (1993). Microscale Heat Conduction in Dielectric Thin Films. Journal of Heat Transfer, 115(1), 7-16. doi:10.1115/1.2910673 | es_ES |
dc.description.references | Xu, K., & Yoshikawa, A. (2003). Effects of film polarities on InN growth by molecular-beam epitaxy. Applied Physics Letters, 83(2), 251-253. doi:10.1063/1.1592309 | es_ES |
dc.description.references | Gonze, X., Beuken, J.-M., Caracas, R., Detraux, F., Fuchs, M., Rignanese, G.-M., … Allan, D. C. (2002). First-principles computation of material properties: the ABINIT software project. Computational Materials Science, 25(3), 478-492. doi:10.1016/s0927-0256(02)00325-7 | es_ES |
dc.description.references | Gonze, X. (2005). A brief introduction to the ABINIT software package. Zeitschrift für Kristallographie - Crystalline Materials, 220(5/6). doi:10.1524/zkri.220.5.558.65066 | es_ES |
dc.description.references | Gonze, X., Amadon, B., Anglade, P.-M., Beuken, J.-M., Bottin, F., Boulanger, P., … Zwanziger, J. W. (2009). ABINIT: First-principles approach to material and nanosystem properties. Computer Physics Communications, 180(12), 2582-2615. doi:10.1016/j.cpc.2009.07.007 | es_ES |
dc.description.references | Troullier, N., & Martins, J. L. (1991). Efficient pseudopotentials for plane-wave calculations. Physical Review B, 43(3), 1993-2006. doi:10.1103/physrevb.43.1993 | es_ES |
dc.description.references | Hartwigsen, C., Goedecker, S., & Hutter, J. (1998). Relativistic separable dual-space Gaussian pseudopotentials from H to Rn. Physical Review B, 58(7), 3641-3662. doi:10.1103/physrevb.58.3641 | es_ES |
dc.description.references | Kim, K., Lambrecht, W. R. L., & Segall, B. (1996). Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. Physical Review B, 53(24), 16310-16326. doi:10.1103/physrevb.53.16310 | es_ES |
dc.description.references | Sarasamak, K., Limpijumnong, S., & Lambrecht, W. R. L. (2010). Pressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study. Physical Review B, 82(3). doi:10.1103/physrevb.82.035201 | es_ES |
dc.description.references | Wright, A. F. (1997). Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN. Journal of Applied Physics, 82(6), 2833-2839. doi:10.1063/1.366114 | es_ES |
dc.description.references | Łepkowski, S. P., Majewski, J. A., & Jurczak, G. (2005). Nonlinear elasticity in III-N compounds:Ab initiocalculations. Physical Review B, 72(24). doi:10.1103/physrevb.72.245201 | es_ES |
dc.description.references | Bungaro, C., Rapcewicz, K., & Bernholc, J. (2000). Ab initiophonon dispersions of wurtzite AlN, GaN, and InN. Physical Review B, 61(10), 6720-6725. doi:10.1103/physrevb.61.6720 | es_ES |
dc.description.references | Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222 | es_ES |