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InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering

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InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering

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Serrano, J.; Bosak, A.; Krisch, M.; Manjón Herrera, FJ.; Romero, AH.; Garro, N.; Wang, X.... (2011). InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering. Physical Review Letters. 106(20):2055011-2055014. https://doi.org/10.1103/PhysRevLett.106.205501

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Título: InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering
Autor: Serrano, Jorge Bosak, A. Krisch, M. Manjón Herrera, Francisco Javier Romero, Aldo Humberto Garro, N. Wang, X. Yoshikawa, A. Kuball, M.
Entidad UPV: Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Fecha difusión:
Resumen:
Achieving comprehensive information on thin film lattice dynamics so far has eluded well established spectroscopic techniques. We demonstrate here the novel application of grazing incidence inelastic x-ray scattering ...[+]
Palabras clave: Fundamental-band gap , Hexagonal InN , Wurtzite aln , Pseudopotentials
Derechos de uso: Reserva de todos los derechos
Fuente:
Physical Review Letters. (issn: 0031-9007 ) (eissn: 1079-7114 )
DOI: 10.1103/PhysRevLett.106.205501
Editorial:
American Physical Society
Versión del editor: http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.106.205501
Código del Proyecto:
info:eu-repo/grantAgreement/MICINN//ENE2008-04373/ES/MATERIALES NANOESTRUCUTRADOS PARA CELULAS SOLARES ORGANICAS Y TIPO GRATZEL/
...[+]
info:eu-repo/grantAgreement/MICINN//ENE2008-04373/ES/MATERIALES NANOESTRUCUTRADOS PARA CELULAS SOLARES ORGANICAS Y TIPO GRATZEL/
info:eu-repo/grantAgreement/Generalitat de Catalunya//2009 SGR 1251/
info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ /
info:eu-repo/grantAgreement/UPV//UPV2010-0096/
info:eu-repo/grantAgreement/CONACYT//J-83247-F/
info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
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Agradecimientos:
J. S. acknowledges financial support from the Spanish Ministry of Science and Innovation by CICYT Grants No. MAT2010-2-129-C02-01 and No. ENE2008-04373, and by Generalitat de Catalunya Grant No. 2009SGR1251. F. J. M. is ...[+]
Tipo: Artículo

References

Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., … Nanishi, Y. (2002). Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80(21), 3967-3969. doi:10.1063/1.1482786

Davydov, V. Y., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., … Graul, J. (2002). Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. physica status solidi (b), 229(3), r1-r3. doi:10.1002/1521-3951(200202)229:3<r1::aid-pssb99991>3.0.co;2-o

Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., … Schaff, W. J. (2006). Evidence forp-Type Doping of InN. Physical Review Letters, 96(12). doi:10.1103/physrevlett.96.125505 [+]
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., … Nanishi, Y. (2002). Unusual properties of the fundamental band gap of InN. Applied Physics Letters, 80(21), 3967-3969. doi:10.1063/1.1482786

Davydov, V. Y., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., … Graul, J. (2002). Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. physica status solidi (b), 229(3), r1-r3. doi:10.1002/1521-3951(200202)229:3<r1::aid-pssb99991>3.0.co;2-o

Jones, R. E., Yu, K. M., Li, S. X., Walukiewicz, W., Ager, J. W., Haller, E. E., … Schaff, W. J. (2006). Evidence forp-Type Doping of InN. Physical Review Letters, 96(12). doi:10.1103/physrevlett.96.125505

Song, J.-H., Akiyama, T., & Freeman, A. J. (2008). Stabilization of Bulkp-Type and Surfacen-Type Carriers in Mg-Doped InN{0001}Films. Physical Review Letters, 101(18). doi:10.1103/physrevlett.101.186801

Qian, Z. G., Shen, W. Z., Ogawa, H., & Guo, Q. X. (2004). Experimental studies of lattice dynamical properties in indium nitride. Journal of Physics: Condensed Matter, 16(12), R381-R414. doi:10.1088/0953-8984/16/12/r01

Davydov, V. Y., Emtsev, V. V., Goncharuk, I. N., Smirnov, A. N., Petrikov, V. D., Mamutin, V. V., … Inushima, T. (1999). Experimental and theoretical studies of phonons in hexagonal InN. Applied Physics Letters, 75(21), 3297-3299. doi:10.1063/1.125330

Majumdar, A. (1993). Microscale Heat Conduction in Dielectric Thin Films. Journal of Heat Transfer, 115(1), 7-16. doi:10.1115/1.2910673

Xu, K., & Yoshikawa, A. (2003). Effects of film polarities on InN growth by molecular-beam epitaxy. Applied Physics Letters, 83(2), 251-253. doi:10.1063/1.1592309

Gonze, X., Beuken, J.-M., Caracas, R., Detraux, F., Fuchs, M., Rignanese, G.-M., … Allan, D. C. (2002). First-principles computation of material properties: the ABINIT software project. Computational Materials Science, 25(3), 478-492. doi:10.1016/s0927-0256(02)00325-7

Gonze, X. (2005). A brief introduction to the ABINIT software package. Zeitschrift für Kristallographie - Crystalline Materials, 220(5/6). doi:10.1524/zkri.220.5.558.65066

Gonze, X., Amadon, B., Anglade, P.-M., Beuken, J.-M., Bottin, F., Boulanger, P., … Zwanziger, J. W. (2009). ABINIT: First-principles approach to material and nanosystem properties. Computer Physics Communications, 180(12), 2582-2615. doi:10.1016/j.cpc.2009.07.007

Troullier, N., & Martins, J. L. (1991). Efficient pseudopotentials for plane-wave calculations. Physical Review B, 43(3), 1993-2006. doi:10.1103/physrevb.43.1993

Hartwigsen, C., Goedecker, S., & Hutter, J. (1998). Relativistic separable dual-space Gaussian pseudopotentials from H to Rn. Physical Review B, 58(7), 3641-3662. doi:10.1103/physrevb.58.3641

Kim, K., Lambrecht, W. R. L., & Segall, B. (1996). Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. Physical Review B, 53(24), 16310-16326. doi:10.1103/physrevb.53.16310

Sarasamak, K., Limpijumnong, S., & Lambrecht, W. R. L. (2010). Pressure-dependent elastic constants and sound velocities of wurtzite SiC, GaN, InN, ZnO, and CdSe, and their relation to the high-pressure phase transition: A first-principles study. Physical Review B, 82(3). doi:10.1103/physrevb.82.035201

Wright, A. F. (1997). Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN. Journal of Applied Physics, 82(6), 2833-2839. doi:10.1063/1.366114

Łepkowski, S. P., Majewski, J. A., & Jurczak, G. (2005). Nonlinear elasticity in III-N compounds:Ab initiocalculations. Physical Review B, 72(24). doi:10.1103/physrevb.72.245201

Bungaro, C., Rapcewicz, K., & Bernholc, J. (2000). Ab initiophonon dispersions of wurtzite AlN, GaN, and InN. Physical Review B, 61(10), 6720-6725. doi:10.1103/physrevb.61.6720

Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222

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