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Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton

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Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton

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Gosalvez Ayuso, MA.; Ferrando Jódar, N.; Xing, Y.; Pal, P.; Sato, K.; Cerdá Boluda, J.; Gadea Gironés, R. (2011). Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton. Journal of Micromechanics and Microengineering. 21(6). https://doi.org/10.1088/0960-1317/21/6/065017

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/58290

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Título: Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton
Autor: Gosalvez Ayuso, Miguel Angel Ferrando Jódar, Néstor Xing, Yan Pal, Prem Sato, Kazuo Cerdá Boluda, Joaquín Gadea Gironés, Rafael
Entidad UPV: Universitat Politècnica de València. Instituto de Instrumentación para Imagen Molecular - Institut d'Instrumentació per a Imatge Molecular
Universitat Politècnica de València. Departamento de Ingeniería Electrónica - Departament d'Enginyeria Electrònica
Fecha difusión:
Resumen:
An evolutionary algorithm is presented for the automated calibration of the continuous cellular automaton for the simulation of isotropic and anisotropic wet chemical etching of silicon in as many as 31 widely different ...[+]
Palabras clave: Single-crystal silicon
Derechos de uso: Cerrado
Fuente:
Journal of Micromechanics and Microengineering. (issn: 0960-1317 ) (eissn: 1361-6439 )
DOI: 10.1088/0960-1317/21/6/065017
Editorial:
IOP Publishing: Hybrid Open Access
Versión del editor: http://dx.doi.org/10.1088/0960-1317/21/6/065017
Código del Proyecto:
info:eu-repo/grantAgreement/MEXT//19201026/
info:eu-repo/grantAgreement/MEXT//70008053/
info:eu-repo/grantAgreement/UPV//PAID-09-09/
info:eu-repo/grantAgreement/NSFC//51075073/
Agradecimientos:
We acknowledge support by MEXT Grant in Aid Research (Kakenhi: Silicon etching (A) 19201026 and 70008053), the Global COE Program of Japan (GCOE, Wakate JSPS Young Scientist Fund), the Ramon y Cajal Fellowship Program by ...[+]
Tipo: Artículo

References

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