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Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method

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Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method

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Montoliu Álvaro, C.; Baer, E.; Cerdá Boluda, J.; Colom Palero, RJ. (2015). Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method. Journal of Micromechanics and Microengineering. 25(6):1-11. doi:10.1088/0960-1317/25/6/065013

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/70079

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Title: Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method
Author: Montoliu Álvaro, Carles Baer, E Cerdá Boluda, Joaquín Colom Palero, Ricardo José
UPV Unit: Universitat Politècnica de València. Instituto de Instrumentación para Imagen Molecular - Institut d'Instrumentació per a Imatge Molecular
Universitat Politècnica de València. Departamento de Ingeniería Electrónica - Departament d'Enginyeria Electrònica
Issued date:
Abstract:
We present a three-dimensional simulator of silicon dioxide etching in a uorocarbon plasma process. Explicit parametrization of the surface is currently one of the most frequently used methods to evolve the etched surface ...[+]
Subjects: Plasma etching , Level set , SiO2 etching , Anetch
Copyrigths: Cerrado
Source:
Journal of Micromechanics and Microengineering. (issn: 0960-1317 )
DOI: 10.1088/0960-1317/25/6/065013
Publisher:
IOP Publishing: Hybrid Open Access
Thanks:
This work has been supported by the Spanish FPI-MICINN BES-2011-045940 grant. We also acknowledge the support of C Strenger, Fraunhofer IISB, who provided the photos with the measured data.
Type: Artículo

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